회사소개
Secon 반도체는 플라즈마 드라이 에칭에 관한 한 20년 이상씩 되는 전문가들이 1998년에 오스트리아에 만든 회사로서, 이미 100대 이상의 판매실적이 있습니다.
Secon 반도체는 얇은 웨이퍼의 생산과 드라이 에칭 분리를 위해서 드라이 플라즈마 에칭기술에 집중된 진일보된 마이크로웨이브 기술을 기본 개념으로 제품을 개발, 생산하고 있다.
Secon 반도체는 반도체 산업에서 다이오드 제조와 웨이퍼 제조 라인을 위한 플라즈마 생산에 관한 한 오랜 경험을 갖고 있다. 모든 장비는 선도적인 기술력을 근본으로 만들어졌으며, 특히 특허로 되어 있는 XRG-800 radical generator는 매우 높은 밀도를 갖는 높은 효율의 플라즈마 소스를 사용하고 있으며, 또한 높은 에칭 레이트 소스를 갖는 XRG-900은 빠른 속도로 대형용량의 물건을 에칭 할 수 있다.
Dry Etch Cluster System for High Speed Wafer Thinning
XPL - 900
The XPL-900 SLIM multi-chamber etcher is a modular production system. It is designed for processing 100mm to 300mm wafers and can be equipped with up to 4 process chambers for the short thinning process (pre-ground wafers to be thinned from 180 μm to 100 - 50 μm) or with up to 6 process chambers for the long thinning process (wafers to be thinned from standard thickness to 100 - 50 μm).
The XPL-900 SLIM is designed for "through the wall" installation. The basic platform consists of load-lock-chamber and control unit, with the possibility to connect up to six (eight) chambers (process-chambers, load- and unload chambers) via vacuum valves to the load-lock-chamber.
The control unit consist of the microprocessor board for the machine functions and a personal computer for process control, administration and the dialogue with the operator. The SLIM process chambers are designed for wafer thinning in the CDE/RIE/UV-mode using ions, UV-radiation and long lifetime radicals from the microwave-ion-source.
Specifications
Wafer size:100, ....., 300 mm
Wafer cooling :  Electrostatic chuck, He-cooling
Wafer handling: Wafer handling with electrostatic applicator end piece
Microwave generator:Wafer handling with electrostatic applicator end piece
RF generator :  13.56 MHz, 0 - 2000 W (per etch module)
Etch rate :25 μm/min on a 200mm Si wafer (SiF6 and N2O)
Etch Uniformity : ± 2 %
Wafer temperature :< 100 ºC (during etch process)
Surface quality:Adjustable by process parameters
Footprint of Etch module:200 x 75 cm2
Gases supply:  SF6, N2O, N2 and He
Electricity  3 x 380 V, 15KVA (etch module), 3 x 380 V, 2.2kVA (Alcatel Pump), 3 x 380 V, 8.2kVA (Ebara pump), 220V (PC operation)
High Etch Rate by the XPL - 900
Material Plain Wafer Structured Wafer
Si 25 μm/min >40 μm/min
GaAs >5 μm/min >15 μm/min
SiC >3 μm/min >10 μm/min
Features
★Etch Rate for Silicon wafers (150.... 200mm) > 25 μm/min, thus high throughput
★Homogeneity of etch rate (wafer thickness) ± 2% typically, ± 5% guaranteed
★Surface quality is adjustable from as polished to velvet-like
★Wafer bow and war page improvement after dry etching
★Die breaking strength improvement after damage removal and stress relief
★Wafer edges: soft edge rounding avoids wafer breakage caused by sharp wafer edges
★Wafer temperature typically < 100 °C, guaranteed < 120 °C
★Wafer handling: wafer fixed in defined position
★Low energy and gas consumption
★Lower cost of ownership
Further Development with XPL - 900
It is due to the high demands of ultra thin wafer applications in the semiconductor industry, Secon has set the goal to continue it's development with the XPL - 900 in order to achieve

★Wafer thinning up below 50 μm (Typically 30 μm) with lower cost of ownership compare to other CMP, wet processing or polishing process
★Trench etching for die separation
★Bump wafer thinning
★Via hole etching